MMUN2130LT1G - onsemi

Manufacturer Part Number

MMUN2130LT1G

Manufacturer

onsemi

Introduction

The MMUN2130LT1G is a pre-biased PNP bipolar junction transistor (BJT) in a small SOT-23-3 (TO-236) package.

Product Features and Performance

Power rating: 246 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 5 mA, 10 mA

DC Current Gain (hFE): 3 (Min) @ 5 mA, 10 V

Base Resistor: 1 kΩ

Emitter-Base Resistor: 1 kΩ

Product Advantages

Pre-biased for simplified circuit design

Small SOT-23-3 (TO-236) package for space-constrained applications

Suitable for a variety of general-purpose amplifier and switching applications

Key Technical Parameters

Transistor Type: PNP, Pre-Biased

Package: SOT-23-3 (TO-236), Surface Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for a wide range of electronic equipment and devices

Application Areas

General-purpose amplifier and switching circuits

Biasing and load switching applications

Product Lifecycle

Currently in production

Replacement or upgrade options available from onsemi

Key Reasons to Choose This Product

Compact SOT-23-3 (TO-236) package

Pre-biased design for simplified circuit implementation

Suitable for a variety of common amplifier and switching applications

Compliant with RoHS3 environmental regulations