Manufacturer Part Number
MMUN2113LT1G
Manufacturer
onsemi
Introduction
PNP pre-biased bipolar junction transistor (BJT)
Product Features and Performance
Designed for general-purpose amplification and switching applications
Pre-biased for ease of use
Compact SOT-23-3 package
Product Advantages
Pre-biased for simplified circuit design
Compact SOT-23-3 package for space-constrained applications
Reliable performance
Key Technical Parameters
Power Max: 246 mW
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 500 nA
Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 μA, 10 mA
Transistor Type: PNP Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5 mA, 10 V
Resistor Base (R1): 47 kΩ
Resistor Emitter Base (R2): 47 kΩ
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount package (SOT-23-3)
Suitable for Tape & Reel (TR) packaging
Application Areas
General-purpose amplification and switching applications
Product Lifecycle
This is an active product, with no indication of discontinuation or availability of replacements.
Key Reasons to Choose This Product
Pre-biased design simplifies circuit implementation
Compact SOT-23-3 package for space-constrained applications
Reliable performance with high DC current gain and low collector-emitter saturation voltage
RoHS3 compliance for environmental sustainability