MMUN2133LT1G - onsemi

Manufacturer Part Number

MMUN2133LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Single Bipolar Junction Transistor (BJT), Pre-Biased

Product Features and Performance

Optimized for high-speed switching applications

Integrated base resistor for pre-biasing

Low collector-emitter saturation voltage

High current gain

Product Advantages

Compact SOT-23-3 surface mount package

Reduced component count due to integrated base resistor

Improved reliability and performance

Key Technical Parameters

Power Rating: 246 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current: 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 10 mA

DC Current Gain (hFE): 80 min @ 5 mA, 10 V

Base Resistor: 4.7 kΩ

Emitter-Base Resistor: 47 kΩ

Quality and Safety Features

RoHS3 Compliant

Reliable and robust design

Compatibility

Compatible with various electronic circuits and systems

Application Areas

High-speed switching

Logic circuits

Amplifier circuits

Driver circuits

Product Lifecycle

Currently available

No information on discontinuation or replacements

Key Reasons to Choose This Product

Integrated base resistor for simplified design

Optimized for high-speed switching

Low collector-emitter saturation voltage for improved efficiency

Compact and reliable surface mount package

Suitable for a wide range of electronic applications