MMUN2213LT1G - onsemi

Manufacturer Part Number

MMUN2213LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors Bipolar (BJT) Single, Pre-Biased

Product Features and Performance

RoHS3 Compliant

SOT-23-3 (TO-236) package

Power Rating: 246 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 300 μA, 10 mA

Transistor Type: NPN Pre-Biased

DC Current Gain (hFE): 80 min. @ 5 mA, 10 V

Base Resistor: 47 kOhms

Emitter-Base Resistor: 47 kOhms

Surface Mount Mounting

Product Advantages

Pre-biased design for simplified circuit design

High breakdown voltage for improved reliability

Low saturation voltage for efficient power transfer

Tightly controlled DC current gain

Key Technical Parameters

Power Rating: 246 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

DC Current Gain (hFE): 80 min. @ 5 mA, 10 V

Quality and Safety Features

RoHS3 Compliant

Reliable performance in various applications

Compatibility

Compatible with standard surface mount sockets and PCB layouts

Application Areas

Suitable for a wide range of electronic circuits and applications, such as:

- Amplifiers

- Switches

- Logic gates

- Driver circuits

Product Lifecycle

This product is an active and widely available part from onsemi.

Replacements and upgrades may be available, depending on specific application requirements.

Key Reasons to Choose This Product

Pre-biased design for simplified circuit design

High breakdown voltage for improved reliability

Low saturation voltage for efficient power transfer

Tightly controlled DC current gain for consistent performance

RoHS3 compliance for environmentally-friendly applications

Surface mount package for easy integration into modern PCB designs