MMUN2216LT1G - onsemi

Manufacturer Part Number

MMUN2216LT1G

Manufacturer

onsemi

Introduction

The MMUN2216LT1G is a pre-biased NPN bipolar junction transistor (BJT) in a surface-mount SOT-23-3 package.

Product Features and Performance

High DC current gain (hFE) of 160 minimum at 5mA, 10V

Low collector-emitter saturation voltage (Vce(sat)) of 250mV maximum at 1mA, 10mA

Collector-emitter breakdown voltage (BVCEO) of 50V maximum

Collector current (Ic) of 100mA maximum

Power dissipation of 400mW maximum

Product Advantages

Pre-biased for simplified biasing circuitry

Small SOT-23-3 surface-mount package

Suitable for a variety of analog and digital switching applications

Key Technical Parameters

NPN bipolar junction transistor

Pre-biased

Collector-emitter breakdown voltage: 50V

Collector current: 100mA

Power dissipation: 400mW

Quality and Safety Features

RoHS3 compliant

Packaged in tape and reel for automated assembly

Compatibility

Compatible with standard SOT-23-3 (TO-236) footprint

Application Areas

Analog and digital switching circuits

Amplifier circuits

Sensor and control applications

General-purpose switching applications

Product Lifecycle

Currently in production

No plans for discontinuation or replacement at this time

Key Reasons to Choose This Product

Pre-biased design for simplified circuit implementation

High DC current gain and low saturation voltage for efficient performance

Small surface-mount package for space-constrained designs

RoHS3 compliance for use in a wide range of applications

Readily available in tape and reel packaging for automated assembly