MMUN2235LT1G - onsemi

Manufacturer Part Number

MMUN2235LT1G

Manufacturer

onsemi

Introduction

NPN pre-biased bipolar junction transistor (BJT) in a small SOT-23-3 package

Product Features and Performance

Collector-emitter breakdown voltage of up to 50V

Collector current rating of up to 100mA

Low collector-emitter saturation voltage of 250mV at 1mA/10mA

Integrated base and emitter resistors for pre-biasing

Small SOT-23-3 surface-mount package

Product Advantages

Suitable for applications requiring small size and simple biasing

Provides a pre-biased BJT solution in a compact package

Reliable performance in a variety of circuits and designs

Key Technical Parameters

Power rating: 246mW

Collector-emitter breakdown voltage: 50V (max)

Collector current: 100mA (max)

Collector cutoff current: 500nA (max)

DC current gain (hFE): 80 (min) at 5mA/10V

Base resistor (R1): 2.2kΩ

Emitter-base resistor (R2): 47kΩ

Quality and Safety Features

RoHS3 compliant

Reliable and robust design for long-term performance

Compatibility

Surface-mount SOT-23-3 (TO-236) package

Application Areas

Suitable for a variety of low-power, low-current analog and digital circuits

Can be used as an amplifier, switch, or driver in various electronic applications

Product Lifecycle

Currently in active production

Replacement or upgrade options may be available in the future

Several Key Reasons to Choose This Product

Compact and space-saving SOT-23-3 package

Integrated pre-biasing resistors for simplified circuit design

Robust and reliable performance at up to 50V and 100mA

RoHS3 compliance for environmental sustainability

Suitable for a wide range of low-power electronic applications