MMUN2215LT1G - onsemi

Manufacturer Part Number

MMUN2215LT1G

Manufacturer

onsemi

Introduction

The MMUN2215LT1G is a pre-biased NPN bipolar junction transistor (BJT) in a surface mount SOT-23-3 package.

Product Features and Performance

400 mW power rating

50 V collector-emitter breakdown voltage

100 mA maximum collector current

500 nA maximum collector cutoff current

250 mV maximum collector-emitter saturation voltage

160 minimum DC current gain

10 kOhm base resistor

Product Advantages

Pre-biased for ease of use

Small surface mount package

Reliable and robust performance

Key Technical Parameters

Power rating: 400 mW

Collector-emitter breakdown voltage: 50 V

Maximum collector current: 100 mA

Collector cutoff current: 500 nA

Collector-emitter saturation voltage: 250 mV

DC current gain: 160 (min)

Base resistor: 10 kOhm

Quality and Safety Features

RoHS3 compliant

Reliable SOT-23-3 package

Compatibility

Compatible with various circuit designs requiring a pre-biased NPN bipolar junction transistor

Application Areas

Amplifier circuits

Switching circuits

Logic gates

Sensor interfaces

General-purpose electronic applications

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options are available if needed.

Key Reasons to Choose This Product

Pre-biased for easy integration into circuits

Small and compact surface mount package

Reliable and robust performance

RoHS3 compliance for environmental considerations

Wide range of applications in electronic circuits