Manufacturer Part Number
MMUN2232LT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors Bipolar (BJT) Single, Pre-Biased
Product Features and Performance
Power Max: 246 mW
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 500 nA
Vce Saturation (Max) @ Ib, Ic: 250 mV @ 1 mA, 10 mA
Transistor Type: NPN Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5 mA, 10 V
Resistor Base (R1): 4.7 kOhms
Resistor Emitter Base (R2): 4.7 kOhms
Product Advantages
RoHS3 Compliant
Suitable for surface mount applications
Key Technical Parameters
Manufacturer's packaging: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Package: Tape & Reel (TR)
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Applications
Application Areas
Discrete Semiconductor Applications
Product Lifecycle
Current product offering
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
RoHS3 Compliant
Suitable for surface mount applications
Robust technical parameters for power, voltage, current, and gain
Pre-biased NPN transistor design
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