Manufacturer Part Number
MMUN2238LT1G
Manufacturer
onsemi
Introduction
Pre-biased NPN bipolar junction transistor (BJT)
Designed for low-power analog and digital applications
Product Features and Performance
Collector-emitter breakdown voltage up to 50V
Collector current up to 100mA
Low collector-emitter saturation voltage
High DC current gain (hFE) of at least 160
Built-in 2.2kΩ base resistor
Product Advantages
Pre-biased for simplified circuit design
Compact surface-mount SOT-23-3 package
RoHS-compliant and halogen-free
Key Technical Parameters
Power rating: 246mW
Collector-emitter breakdown voltage: 50V
Collector current: 100mA
Collector cutoff current: 500nA
Collector-emitter saturation voltage: 250mV
Quality and Safety Features
RoHS3 compliant
Halogen-free
Compatibility
Compatible with various low-power analog and digital circuits
Application Areas
Low-power analog and digital applications
Biasing circuits
Switching circuits
Amplifier circuits
Product Lifecycle
Active and available for purchase
Replacements and upgrades may be available
Key Reasons to Choose This Product
Pre-biased for simplified circuit design
High voltage and current ratings for versatile applications
Low saturation voltage for efficient operation
High current gain for enhanced performance
Compact surface-mount package for space-constrained designs
RoHS compliance and halogen-free for environmental responsibility