Manufacturer Part Number
MMUN2233LT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors Bipolar (BJT) Single, Pre-Biased
Product Features and Performance
Power Rating: 246 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 500 nA
Collector-Emitter Saturation Voltage: 250 mV @ 300 μA, 10 mA
DC Current Gain: 80 min. @ 5 mA, 10 V
Base Resistor: 4.7 kΩ
Emitter-Base Resistor: 47 kΩ
Product Advantages
Pre-biased for easy implementation
Compact surface mount package
Wide voltage and current capabilities
Key Technical Parameters
Transistor Type: NPN Pre-Biased
Packaging: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of electronic circuit applications
Application Areas
Suitable for use in various electronic circuits such as switches, amplifiers, and logic gates
Product Lifecycle
Current product offering, no discontinuation or replacement planned
Several Key Reasons to Choose This Product
Convenient pre-biased design for easy implementation
Compact surface mount package for space-constrained applications
Wide voltage and current capabilities to support diverse circuit requirements
Reliable performance and RoHS compliance for quality assurance
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