MMUN2111LT3G - onsemi

Manufacturer Part Number

MMUN2111LT3G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single, Pre-Biased

Product Features and Performance

50V Collector-Emitter Breakdown Voltage

100mA Collector Current (Max)

246mW Power Dissipation (Max)

35 DC Current Gain (hFE) Min @ 5mA, 10V

250mV Collector-Emitter Saturation Voltage @ 10mA, 300μA

500nA Collector Cutoff Current (Max)

10kΩ Base Resistor, 10kΩ Emitter-Base Resistor

Product Advantages

Pre-biased configuration for simplified circuit design

Surface mount packaging for compact assembly

RoHS compliant

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Power Dissipation (Max): 246mW

DC Current Gain (hFE): 35 Min @ 5mA, 10V

Collector-Emitter Saturation Voltage: 250mV @ 10mA, 300μA

Collector Cutoff Current (Max): 500nA

Base Resistor: 10kΩ, Emitter-Base Resistor: 10kΩ

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount (SOT-23-3 package)

Application Areas

General-purpose amplifier and switching applications

Biasing and level shifting circuits

Relay and solenoid drivers

Logic level translators

Product Lifecycle

Current product, no discontinuation plans

Several Key Reasons to Choose This Product

Pre-biased configuration for simplified circuit design

Surface mount packaging for compact assembly

Robust performance characteristics (high voltage, current, and power ratings)

Compliance with RoHS environmental regulations

Widespread compatibility and application versatility