Manufacturer Part Number
MMUN2111LT1G
Manufacturer
onsemi
Introduction
Pre-biased PNP bipolar junction transistor (BJT) in a SOT-23-3 package.
Product Features and Performance
Low-power and high-speed switching performance
Integrated base and emitter resistors for pre-biasing
Collector-emitter voltage up to 50V
Collector current up to 100mA
Low collector-emitter saturation voltage of 250mV at 10mA
Product Advantages
Simplified circuit design with integrated resistors
Improved switching speed and efficiency
Reduced component count and board space
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 50V
Collector Current (Max): 100mA
Collector Cutoff Current (Max): 500nA
DC Current Gain (hFE): 35 (min) at 5mA, 10V
Integrated Base and Emitter Resistors: 10kΩ each
Quality and Safety Features
RoHS3 compliant
Housed in a compact SOT-23-3 (TO-236) package
Compatibility
Can be used as a replacement or upgrade for similar pre-biased PNP BJT transistors in surface mount applications.
Application Areas
General-purpose switching and amplification
Biasing and level shifting circuits
Automotive electronics
Industrial control systems
Consumer electronics
Product Lifecycle
Current product, no discontinuation or end-of-life plans announced.
Key Reasons to Choose This Product
Simplified circuit design with integrated resistors
Improved switching speed and efficiency
Compact and space-saving SOT-23-3 package
Reliable performance and RoHS3 compliance
Wide range of applications in various industries