MMUN2112LT1G - onsemi

Manufacturer Part Number

MMUN2112LT1G

Manufacturer

onsemi

Introduction

The MMUN2112LT1G is a PNP bipolar transistor with a pre-biased configuration, designed for various electronic applications.

Product Features and Performance

Power rating: 246 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 300 μA, 10 mA

DC Current Gain (hFE): 60 min. @ 5 mA, 10 V

Base Resistor (R1): 22 kΩ

Emitter-Base Resistor (R2): 22 kΩ

Product Advantages

Pre-biased configuration for simple circuit design

High breakdown voltage for robust operation

Low saturation voltage for efficient performance

Wide range of current gain for versatile applications

Key Technical Parameters

Transistor Type: PNP, Pre-Biased

Package: SOT-23-3 (TO-236)

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Suitable for various electronic circuits and systems

Application Areas

Amplifiers

Switches

Biasing circuits

Signal conditioning

Power supplies

Product Lifecycle

Current product offering

Replacements and upgrades may be available

Key Reasons to Choose This Product

Robust performance with high breakdown voltage

Efficient operation with low saturation voltage

Versatile applications with wide current gain range

Compact and reliable surface mount package

RoHS compliance for environmental responsibility