Manufacturer Part Number
SISS05DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel TrenchFET® Gen IV MOSFET
Product Features and Performance
30V Drain-Source Voltage
5mΩ maximum On-Resistance
4A continuous Drain Current at 25°C
108A continuous Drain Current at Case Temperature
High input capacitance of 4930pF
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent RDS(on) performance
High power handling capability
Suitable for high-current switching applications
Key Technical Parameters
Vds: 30V
Vgs (max): +16V, -20V
RDS(on) (max): 3.5mΩ @ 10A, 10V
Id (continuous): 29.4A (Ta), 108A (Tc)
Ciss (max): 4930pF @ 15V
Power Dissipation: 5W (Ta), 65.7W (Tc)
Vgs(th) (max): 2.2V @ 250A
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with PowerPAK 1212-8S package
Application Areas
High-current switching applications
Power supplies
Motor drives
Industrial controls
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available
Several Key Reasons to Choose This Product
Excellent RDS(on) performance for high efficiency
High power handling capability for demanding applications
Wide operating temperature range for reliable operation
Designed and manufactured to high quality standards
Compatible with widely-used PowerPAK 1212-8S package