Manufacturer Part Number
SISS27DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance p-channel MOSFET for power management and switching applications
Product Features and Performance
Wide operating temperature range of -50°C to 150°C
Low on-resistance of 5.6 mΩ at 15 A, 10 V
High current capability of 50 A at 25°C
Low input capacitance of 5,250 pF at 15 V
High power dissipation of 4.8 W at Ta and 57 W at Tc
Product Advantages
Optimized for efficient power conversion and control
Enables compact and high-density power supply designs
Suitable for a wide range of power management and switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate to Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 2.2 V at 250 A
On-Resistance (Rds(on)): 5.6 mΩ at 15 A, 10 V
Input Capacitance (Ciss): 5,250 pF at 15 V
Power Dissipation: 4.8 W at Ta, 57 W at Tc
Quality and Safety Features
RoHS3 compliant
Packaged in a reliable PowerPAK 1212-8S surface mount package
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Industrial controls
Telecommunications equipment
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent performance characteristics for efficient power conversion and control
Compact and high-density design enables space-saving power supply layouts
Wide operating temperature range and high power dissipation capability
Robust and reliable packaging for demanding applications
Compatibility with a variety of power management and switching applications