Manufacturer Part Number
SISS63DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel TrenchFET Gen III MOSFET
Product Features and Performance
Low on-resistance for high efficiency
Low gate charge for fast switching
High current capability
Wide temperature range operation (-55°C to 150°C)
Low input capacitance for high-speed switching
Product Advantages
Excellent power efficiency
Fast switching speed
High current handling capability
Reliable performance in wide temperature conditions
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±12V
On-resistance (Rds(on)): 2.7mΩ @ 15A, 10V
Continuous Drain Current (Id): 35.1A (Ta), 127.5A (Tc)
Input Capacitance (Ciss): 7080pF @ 10V
Power Dissipation: 5W (Ta), 65.8W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable design for long-term performance
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Power supplies
Motor drives
Industrial automation
Switching power converters
Product Lifecycle
Current production model, no discontinuation planned
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power efficiency and switching performance
High current capability for demanding applications
Wide temperature range operation for reliability
RoHS compliance for environmental friendliness
Proven reliability and long-term performance