SISS23DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SISS23DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel power MOSFET with low on-resistance, suitable for power management and control applications.

Product Features and Performance

Very low on-resistance of 4.5 mΩ at 20 A and 4.5 V gate drive

Continuous drain current of 50 A at 25°C case temperature

Input capacitance of 8,840 pF at 15 V

Power dissipation of 4.8 W at 25°C ambient temperature and 57 W at 25°C case temperature

Operating temperature range of -50°C to 150°C

Product Advantages

Excellent power handling capability

Efficient power conversion and control

Compact and reliable PowerPAK 1212-8S package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20 V

Gate-to-Source Voltage (Vgs): ±8 V

Threshold Voltage (Vgs(th)): 900 mV at 250 A

Gate Charge (Qg): 300 nC at 10 V

Quality and Safety Features

RoHS3 compliant

Meets environmental and safety standards

Compatibility

Suitable for a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

Industrial controls

Automotive electronics

Product Lifecycle

Currently available

No information on discontinuation or replacement

Several Key Reasons to Choose This Product

Excellent power handling capability

Efficient power conversion and control

Compact and reliable package

High performance and reliability

Broad compatibility and application areas