Manufacturer Part Number
SISHA12ADN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET IV power MOSFET for high-frequency, high-efficiency power conversion applications
Product Features and Performance
30V drain-to-source voltage
Low on-resistance of 4.3 mOhm (max) at 10A, 10V
High current capability of 22A (Ta) and 25A (Tc)
Low gate charge of 45 nC (max) at 10V
Wide operating temperature range of -55°C to 150°C
RoHS-compliant and halogen-free package
Product Advantages
Excellent power density and efficiency
Improved thermal performance
Reliable and robust design
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Gate-to-source voltage (Vgs): +20V/-16V
On-resistance (Rds(on)): 4.3 mOhm (max) at 10A, 10V
Continuous drain current (Id): 22A (Ta), 25A (Tc)
Input capacitance (Ciss): 2070 pF (max) at 15V
Power dissipation: 3.5W (Ta), 28W (Tc)
Threshold voltage (Vgs(th)): 2.2V (max) at 250A
Quality and Safety Features
RoHS3 compliant
Halogen-free package
Compatibility
Suitable for high-frequency, high-efficiency power conversion applications
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent power density and efficiency
Reliable and robust design
Wide operating temperature range
Low on-resistance and high current capability
Tight control of key parameters for improved system performance
SISF00DN-T1-GE3 MOSElectro-Films (EFI) / Vishay