Manufacturer Part Number
SISS10ADN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance, low on-resistance N-channel TrenchFET® Gen IV power MOSFET in a PowerPAK 1212-8S package.
Product Features and Performance
Very low on-resistance, reducing power losses and increasing efficiency
Fast switching speed
Robust avalanche capability
Excellent thermal resistance
Product Advantages
Optimized for high-frequency, high-efficiency power conversion applications
Efficient thermal management
Reliable and rugged design
Key Technical Parameters
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Current Continuous Drain (Id) @ 25°C: 31.7A (Ta), 109A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 20 V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Quality and Safety Features
RoHS3 Compliant
Meets strict quality and reliability standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Automotive electronics
Industrial automation and control
Power supplies
Motor drives
Telecommunications equipment
Product Lifecycle
Currently in active production
No plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent efficiency and power density
Robust and reliable performance
Optimized for high-frequency, high-efficiency power conversion
Wide operating temperature range
Compact and space-saving package