Manufacturer Part Number
SISH410DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SISH410DN-T1-GE3 is a N-channel power MOSFET from Vishay/Siliconix's TrenchFET series, designed for efficient power conversion and switching applications.
Product Features and Performance
20V drain-source voltage
8mΩ maximum on-resistance at 20A, 10V
22A continuous drain current at 25°C ambient
35A continuous drain current at 25°C case
1600pF maximum input capacitance at 10V
8W maximum power dissipation at 25°C ambient
52W maximum power dissipation at 25°C case
-55°C to 150°C operating temperature range
Product Advantages
Efficient power conversion and switching
Low on-resistance for low power loss
High current capability
Wide operating temperature range
Key Technical Parameters
Drain-source voltage: 20V
Gate-source voltage: ±20V
On-resistance: 4.8mΩ @ 20A, 10V
Drain current: 22A @ 25°C ambient, 35A @ 25°C case
Input capacitance: 1600pF @ 10V
Power dissipation: 3.8W @ 25°C ambient, 52W @ 25°C case
Quality and Safety Features
ROHS3 compliant
PowerPAK 1212-8SH package
Compatibility
The SISH410DN-T1-GE3 is compatible with various power conversion and switching applications.
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
The SISH410DN-T1-GE3 is an active product and is not nearing discontinuation. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Efficient power conversion and switching
Low on-resistance for low power loss
High current capability
Wide operating temperature range
Compact and thermally efficient PowerPAK 1212-8SH package
RoHS3 compliant for environmental safety