Manufacturer Part Number
SISA96DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel Trench MOSFET in PowerPAK 1212-8 package
Product Features and Performance
30V Drain-Source Voltage (Vdss)
8mΩ Maximum On-Resistance (Rds(on)) at 10A, 10V
16A Continuous Drain Current (Id) at 25°C
1385pF Maximum Input Capacitance (Ciss) at 15V
5W Maximum Power Dissipation at 25°C
Product Advantages
Improved energy efficiency
Increased power density
Reduced conduction losses
Compact and space-saving package
Key Technical Parameters
Vgs (Max): +20V, -16V
Vgs(th) (Max) @ Id: 2.2V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Meets Vishay's high-quality standards
Compatibility
Suitable for use in a wide range of power management applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial electronics
Product Lifecycle
This product is currently in active production
Replacement or upgraded models may be available in the future
Key Reasons to Choose This Product
High efficiency and low power losses
Compact and space-saving package
Reliable and durable performance
Suitable for a wide range of power management applications
SISB46DN-T1-GE3Vishay