SISA96DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SISA96DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel Trench MOSFET in PowerPAK 1212-8 package

Product Features and Performance

30V Drain-Source Voltage (Vdss)

8mΩ Maximum On-Resistance (Rds(on)) at 10A, 10V

16A Continuous Drain Current (Id) at 25°C

1385pF Maximum Input Capacitance (Ciss) at 15V

5W Maximum Power Dissipation at 25°C

Product Advantages

Improved energy efficiency

Increased power density

Reduced conduction losses

Compact and space-saving package

Key Technical Parameters

Vgs (Max): +20V, -16V

Vgs(th) (Max) @ Id: 2.2V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V

Quality and Safety Features

RoHS3 compliant

Meets Vishay's high-quality standards

Compatibility

Suitable for use in a wide range of power management applications

Application Areas

Power supplies

Motor drives

Inverters

Industrial electronics

Product Lifecycle

This product is currently in active production

Replacement or upgraded models may be available in the future

Key Reasons to Choose This Product

High efficiency and low power losses

Compact and space-saving package

Reliable and durable performance

Suitable for a wide range of power management applications