Manufacturer Part Number
SISH112DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SISH112DN-T1-GE3 is a discrete semiconductor product, specifically a single N-channel MOSFET transistor.
Product Features and Performance
Trench MOSFET technology
30V drain-source voltage
Maximum continuous drain current of 11.3A at 25°C case temperature
Very low on-resistance of 7.5mΩ at 10V gate-source voltage
High input capacitance of 2610pF at 15V drain-source voltage
Maximum power dissipation of 1.5W at 25°C case temperature
Wide operating temperature range of -50°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
High current capability
Compact PowerPAK 1212-8SH surface mount package
Key Technical Parameters
N-channel MOSFET
Drain-source voltage (Vdss): 30V
Maximum gate-source voltage (Vgs): ±12V
On-resistance (Rds(on)): 7.5mΩ
Continuous drain current (Id): 11.3A
Input capacitance (Ciss): 2610pF
Power dissipation (Pd): 1.5W
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
This MOSFET is suitable for a wide range of power switching and control applications.
Application Areas
Power supplies
Motor drives
Lighting controls
Industrial automation
Telecommunications equipment
Product Lifecycle
The SISH112DN-T1-GE3 is an actively supported product, and there are no indications of it being discontinued. Replacement or upgrade options may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance for improved system performance
High current capability for demanding applications
Compact surface mount package for space-constrained designs
Wide operating temperature range for reliable operation in diverse environments
RoHS compliance for use in environmentally-conscious applications
SISF00DN-T1-GE3 MOSElectro-Films (EFI) / Vishay