Manufacturer Part Number
SISA40DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET® Gen IV power MOSFET
Product Features and Performance
Low on-resistance for high efficiency
Fast switching for high-frequency applications
Rugged and reliable construction
Suitable for hard-switching applications
Product Advantages
Excellent power density
Superior thermal performance
Enhanced reliability
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 10A, 10V
Current Continuous Drain (Id) @ 25°C: 43.7A (Ta), 162A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with an operating temperature range of -55°C to 150°C (TJ)
Compatibility
Compatible with various power applications and circuits
Suitable for surface mount assembly
Application Areas
Suitable for hard-switching applications
Suitable for high-frequency applications
Product Lifecycle
Currently available
No information on upcoming discontinuation or replacements
Key Reasons to Choose This Product
Excellent power density and thermal performance
Superior reliability and ruggedness
Fast switching for high-frequency applications
Suitable for a wide range of power applications
SiSA18ADNElectro-Films (EFI) / Vishay