Manufacturer Part Number
SISA72DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
A high-performance N-channel MOSFET from Vishay's TrenchFET Gen IV series, designed for power management and switching applications.
Product Features and Performance
Low on-resistance (RDS(on) of 3.5 mΩ typical)
High current capability (60A continuous drain current at 25°C)
Low gate charge (Qg of 30 nC typical) for efficient switching
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (Ciss of 3240 pF typical)
Rugged and reliable trench MOSFET technology
Product Advantages
Excellent power efficiency and thermal performance
Ideal for high-current, high-frequency power conversion
Suitable for demanding industrial, automotive, and consumer applications
Compact and space-saving PowerPAK 1212-8 package
Key Technical Parameters
Drain-to-Source Voltage (VDS): 40V
Gate-to-Source Voltage (VGS): +20V/-16V
Continuous Drain Current (ID): 60A at 25°C
On-Resistance (RDS(on)): 3.5 mΩ typical
Power Dissipation (PD): 52W at 25°C
Quality and Safety Features
RoHS3 compliant
ESD protection
Rugged and reliable design
Compatibility
This MOSFET is compatible with a wide range of power management and switching circuits, making it suitable for a variety of applications.
Application Areas
Switch-mode power supplies
Motor drives
Lighting and LED controls
Telecommunications equipment
Automotive electronics
Product Lifecycle
The SISA72DN-T1-GE3 is a current production part and is not nearing discontinuation. Replacement or upgrade options may be available from Vishay/Siliconix as technology advances.
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current capability and low on-resistance for improved system efficiency
Compact and space-saving package for design flexibility
Reliable and rugged trench MOSFET technology
Suitable for a wide range of power management and switching applications