Manufacturer Part Number
SISA35DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel TrenchFET Gen III MOSFET in a compact PowerPAK 1212-8 package.
Product Features and Performance
30V Drain-Source Voltage
19mΩ On-Resistance
10A Continuous Drain Current
1500pF Input Capacitance
42nC Gate Charge
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Optimized for high-frequency, high-efficiency power conversion applications
Compact and thermally efficient PowerPAK 1212-8 package
Superior performance compared to previous generation TrenchFET MOSFETs
Key Technical Parameters
Vdss: 30V
Vgs (Max): ±20V
Rds On (Max): 19mΩ @ 9A, 10V
Id (Continuous): 10A (Ta), 16A (Tc)
Ciss (Max): 1500pF @ 15V
Qg (Max): 42nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent performance and efficiency for high-frequency power conversion
Compact and thermally efficient packaging
Proven reliability and quality from a trusted manufacturer
Wide range of compatible applications