Manufacturer Part Number
SISA14DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET in a PowerPAK 1212-8 package
Product Features and Performance
Trench MOSFET technology
Low RDS(on) of 5.1 mΩ
Continuous drain current of 20A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1450 pF
Maximum power dissipation of 3.57W at 25°C and 26.5W at case temperature
Product Advantages
Improved efficiency and thermal performance
Compact and low-profile package
Suitable for high-current, high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30V
Gate-to-Source Voltage (VGS): +20V/-16V
Threshold Voltage (VGS(th)): 2.2V
Gate Charge (Qg): 29 nC
Quality and Safety Features
RoHS3 compliant
Suitable for use in high-reliability applications
Compatibility
Surface mount package
Compatible with PowerPAK 1212-8 footprint
Application Areas
Switching power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Current product
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance-to-size ratio
Suitable for high-current, high-frequency applications
Reliable and RoHS-compliant design
Wide operating temperature range