Manufacturer Part Number
SISA04DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET in a compact PowerPAK 1212-8 package.
Product Features and Performance
N-channel MOSFET with low on-resistance and high current capability
Capable of handling up to 40 A continuous drain current at 25°C case temperature
Low gate charge for efficient switching
Suitable for high-frequency, high-efficiency power conversion applications
Product Advantages
Compact PowerPAK 1212-8 package
Low on-resistance for low power loss
High current capability
Fast switching for high-frequency operation
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): +20 V, -16 V
On-Resistance (Rds(on)): 2.15 mΩ @ 15 A, 10 V
Input Capacitance (Ciss): 3595 pF @ 15 V
Power Dissipation (Max): 3.7 W (Ta), 52 W (Tc)
Operating Temperature: -55°C to 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for industrial and automotive applications
Compatibility
Surface mount technology (SMT) compatible
Suitable for high-frequency, high-efficiency power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
Industrial and automotive electronics
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement or upgrade options available from Vishay/Siliconix
Key Reasons to Choose This Product
Compact and efficient PowerPAK 1212-8 package
Low on-resistance for high efficiency
High current capability for demanding applications
Fast switching performance for high-frequency operation
Reliable and robust design for industrial and automotive use
RoHS3 compliance for environmental responsibility
SiSA14DNElectro-Films (EFI) / Vishay