SISA12ADN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SISA12ADN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

N-Channel MOSFET

30V Drain to Source Voltage

25A Continuous Drain Current at 25°C

3mOhm On-Resistance at 10A, 10V

2070pF Input Capacitance at 15V

45nC Gate Charge at 10V

-55°C to 150°C Operating Temperature

5W Power Dissipation at Ta, 28W at Tc

Product Advantages

Low On-Resistance

High Drain Current Capability

Wide Temperature Range

Surface Mount Packaging

Key Technical Parameters

Vdss: 30V

Vgs (Max): +20V, -16V

Rds On (Max): 4.3mOhm

Id (Tc): 25A

Ciss (Max): 2070pF

Power Dissipation (Max): 3.5W (Ta), 28W (Tc)

Vgs(th) (Max): 2.2V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Qg (Max): 45nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Compatibility

PowerPAK 1212-8 Package

Application Areas

Suitable for a wide range of power management and control applications

Product Lifecycle

Currently available

No information on discontinuation or replacements

Key Reasons to Choose This Product

Low On-Resistance for high efficiency

High Drain Current Capability for high power applications

Wide Operating Temperature Range for versatility

Surface Mount Packaging for easy integration

RoHS Compliance for environmental responsibility