Manufacturer Part Number
SISA10DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET power MOSFET in PowerPAK 1212-8 package
Product Features and Performance
Low on-resistance for high efficiency
High power density
Fast switching speed
Excellent thermal performance
Suitable for high-frequency applications
Product Advantages
Compact and space-saving package
High current handling capability
Low conduction and switching losses
Robust and reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Vgs (Max): +20V, -16V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power supply and motor control applications
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
Currently available
No discontinuation or replacement plans announced
Key Reasons to Choose This Product
Excellent performance-to-size ratio
High efficiency and low power loss
Robust and reliable operation
Suitable for high-frequency and high-power applications
Compact and space-saving package
SIS990DN-T1-GE3Vishay