SISA18ADN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SISA18ADN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance, high-density N-channel power MOSFET in a compact PowerPAK 1212-8 package.

Product Features and Performance

Designed for high-density, high-efficiency power conversion applications

Low RDS(on) for low conduction losses

High current capability up to 38.3A

Wide operating temperature range of -55°C to 150°C

Compact and thermally efficient PowerPAK 1212-8 package

Product Advantages

Excellent thermal performance

High power density

Low on-resistance for high efficiency

Reliable and robust design

Key Technical Parameters

Drain to Source Voltage (VDS): 30V

Gate-Source Voltage (VGS): +20V/-16V

On-Resistance (RDS(on)): 7.5mΩ

Continuous Drain Current (ID): 38.3A

Input Capacitance (Ciss): 1000pF

Power Dissipation (Pd): 3.2W (Ta), 19.8W (Tc)

Quality and Safety Features

RoHS3 compliant

Designed for high reliability and long lifespan

Compatibility

Suitable for a wide range of power conversion applications

Application Areas

Switching power supplies

Motor drives

Industrial automation

Automotive electronics

Product Lifecycle

Currently in active production

No known plans for discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Excellent thermal performance and power density

Low on-resistance for high efficiency

Wide operating temperature range

Reliable and robust design

Compact and thermally efficient package