Manufacturer Part Number
SISH615ADN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
ROHS3 Compliant
PowerPAK 1212-8SH package
TrenchFET Gen III series
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 20V
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
MOSFET (Metal Oxide) technology
Continuous Drain Current (Id) @ 25°C: 22.1A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
P-Channel FET Type
Vgs(th) (Max) @ Id: 1.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10V
Product Advantages
High performance TrenchFET Gen III technology
Low on-resistance for high efficiency
High power density
Wide temperature range
Compatible with various applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Continuous Drain Current (Id) @ 25°C: 22.1A (Ta), 35A (Tc)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Quality and Safety Features
ROHS3 Compliant
Reliable performance in wide temperature range
Compatibility
Compatible with various applications requiring high performance, low on-resistance MOSFETs
Application Areas
Power management
Motor control
Automotive electronics
Industrial equipment
Consumer electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High performance TrenchFET Gen III technology
Low on-resistance for high efficiency
High power density
Wide temperature range
Reliable performance
Compatibility with various applications