SISS12DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SISS12DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

ROHS3 Compliant

PowerPAK 1212-8S Package

TrenchFET Gen IV Series

N-Channel MOSFET

-55°C to 150°C Operating Temperature

40V Drain-Source Voltage

98mΩ On-Resistance @ 10A, 10V

5A Continuous Drain Current @ 25°C

4270pF Input Capacitance @ 20V

5W Power Dissipation @ 25°C, 65.7W @ 100°C

89nC Gate Charge @ 10V

Product Advantages

Low On-Resistance

High Current Capability

High Power Handling

Compact PowerPAK Package

Key Technical Parameters

Vds: 40V

Vgs (Max): +20V, -16V

Rds(on) (Max): 1.98mΩ

Id (Continuous): 37.5A @ 25°C, 60A @ 100°C

Ciss (Max): 4270pF @ 20V

Pd (Max): 5W @ 25°C, 65.7W @ 100°C

Vgs(th) (Max): 2.4V @ 250mA

Drive Voltage: 4.5V (Max Rds(on)), 10V (Min Rds(on))

Qg (Max): 89nC @ 10V

Quality and Safety Features

ROHS3 Compliant

Compatibility

Surface Mount

Application Areas

Power Management

Motor Control

Switching Power Supplies

Product Lifecycle

Currently in production

Replacement/upgrade options available

Key Reasons to Choose

Low On-Resistance for high efficiency

High Current and Power Handling

Compact PowerPAK Package

Wide Operating Temperature Range

Suitable for Power Management, Motor Control, and Switching Power Supply Applications