SISS42LDN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SISS42LDN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel MOSFET with low on-resistance and high current capability

Product Features and Performance

Very low on-resistance of 14.9 mΩ at 15 A and 10 V

Continuous drain current of 11.3 A at 25°C ambient and 39 A at 25°C case temperature

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 2058 pF at 50 V

High power dissipation of 4.8 W at 25°C ambient and 57 W at 25°C case temperature

Product Advantages

Excellent performance for high-current, high-power switching applications

Small, space-saving PowerPAK 1212-8S package

Trench MOSFET technology for high efficiency and low gate charge

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100 V

Gate-to-Source Voltage (Vgs) (Max): ±20 V

Threshold Voltage (Vgs(th)) (Max) @ Id: 2.5 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 4.5 V, 10 V

Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified

Compatibility

Surface mount, compatible with standard SMT assembly processes

Application Areas

High-current, high-power switching applications

Power supplies

Motor drives

Industrial equipment

Telecommunications equipment

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacements or upgrades may be available in the future

Several Key Reasons to Choose This Product

Excellent performance with very low on-resistance and high current capability

Compact, space-saving PowerPAK 1212-8S package

Wide operating temperature range suitable for demanding applications

High efficiency and low gate charge due to trench MOSFET technology

RoHS3 compliance and AEC-Q101 qualification for quality and safety