Manufacturer Part Number
SISS65DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel enhancement-mode power MOSFET
Part of the TrenchFET Gen III series
Suitable for a wide range of power management applications
Product Features and Performance
Low on-resistance for improved efficiency
Fast switching for high-frequency operation
Rugged and reliable design
Optimized for reduced gate charge and input capacitance
Excellent thermal management capabilities
Product Advantages
Improved power density and efficiency
Reduced power dissipation and cooling requirements
Increased system reliability and performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20 V
On-resistance (Rds(on)): 4.6 mΩ @ 15 A, 10 V
Continuous Drain Current (Id): 25.9 A (Ta), 94 A (Tc)
Input Capacitance (Ciss): 4,930 pF @ 15 V
Power Dissipation (Max): 5.1 W (Ta), 65.8 W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power management applications, including:
- Switching power supplies
- Motor drives
- Power converters
- Battery chargers
- Automotive electronics
Application Areas
Power management
Switching power supplies
Motor control
Power conversion
Automotive electronics
Product Lifecycle
This product is an active and widely used component in the industry
Replacement or upgrade options are available from Vishay / Siliconix
Several Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-resistance and fast switching
Robust and reliable design for long-term operation
Optimized for reduced power dissipation and thermal management
Broad compatibility and suitability for a wide range of power management applications
Availability of replacement and upgrade options from the manufacturer