SISS98DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SISS98DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel MOSFET transistor

Product Features and Performance

200V drain-to-source voltage

Low on-resistance of 105mΩ

Continuous drain current of 14.1A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 608pF

High power dissipation of 57W

Product Advantages

Excellent performance for power switching applications

Compact PowerPAK 1212-8 package

RoHS3 compliant

Key Technical Parameters

Drain-to-source voltage (Vdss): 200V

Gate-to-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 105mΩ

Continuous drain current (Id): 14.1A

Input capacitance (Ciss): 608pF

Power dissipation (Pd): 57W

Quality and Safety Features

RoHS3 compliant

Reliable performance in wide temperature range

Compatibility

Compatible with PowerPAK 1212-8 package

Application Areas

Power switching

Motor control

Inverters

Converters

Industrial and consumer electronics

Product Lifecycle

Current product, no discontinuation planned

Replacement and upgrade options available

Key Reasons to Choose This Product

Excellent performance for power switching applications

Compact and efficient PowerPAK 1212-8 package

Reliable operation in wide temperature range

RoHS3 compliance for environmental responsibility