Manufacturer Part Number
SISS27ADN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel TrenchFET Gen III MOSFET
Product Features and Performance
High-efficiency MOSFET with ultra-low on-resistance
Improved switching performance and low gate charge
Suitable for high-current, high-frequency switching applications
Product Advantages
Exceptional power density and efficiency
Reduced conduction and switching losses
Improved thermal management
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 5.1mΩ @ 15A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 4660pF @ 15V
Power Dissipation (Ptot): 57W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 150°C)
Compatibility
Surface mount package (PowerPAK 1212-8S)
Tape & reel packaging
Application Areas
High-power DC/DC converters
Synchronous rectifiers
Motor drives
Industrial and automotive power applications
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
Industry-leading performance in power density and efficiency
Optimized for high-current, high-frequency switching applications
Excellent thermal management and reliability
Broad compatibility and ease of integration