Manufacturer Part Number
IXTP01N100D
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
Depletion Mode
Operating Temperature Range: -55°C to 150°C
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 80Ω @ 50mA, 0V
Continuous Drain Current (Id): 400mA @ 25°C
Input Capacitance (Ciss): 100pF @ 25V
Power Dissipation: 1.1W (Ta), 25W (Tc)
Gate Charge (Qg): 5.8nC @ 5V
Product Advantages
High voltage operation
Low on-resistance
Depletion mode for simple control
Key Technical Parameters
MOSFET Technology
Through-hole Mounting
TO-220-3 Package
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with standard MOSFET applications
Application Areas
Suitable for high-voltage, high-power switch applications
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High voltage capability up to 1000V
Low on-resistance for efficient power switching
Depletion mode operation for simple control
Suitable for a wide range of high-power, high-voltage applications
Reliable and RoHS-compliant construction
