Manufacturer Part Number
IXTN90P20P
Manufacturer
IXYS Corporation
Introduction
High-power P-channel MOSFET with high current rating and low on-resistance.
Product Features and Performance
P-channel MOSFET with 200V drain-to-source voltage rating
Continuous drain current of 90A at 25°C case temperature
Low on-resistance of 44mΩ at 500mA, 10V gate-source voltage
Wide operating temperature range of -55°C to 150°C
Fast switching capability with low gate charge of 205nC at 10V
Product Advantages
Excellent thermal performance and power handling capability
Robust design for reliable operation in high-power applications
Low conduction losses for improved energy efficiency
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 44mΩ @ 500mA, 10V
Continuous Drain Current (Id): 90A @ 25°C
Input Capacitance (Ciss): 12,000pF @ 25V
Power Dissipation (Pd): 890W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Chassis mount packaging (SOT-227B) for improved thermal performance
Compatibility
Can be used in a wide range of high-power electronic applications.
Application Areas
High-power motor drives
Power inverters and converters
Industrial control and automation
Switched-mode power supplies
Welding equipment
Product Lifecycle
This product is an active and available part. No planned discontinuation.
Key Reasons to Choose This Product
High current handling and low on-resistance for improved efficiency
Robust and reliable design for demanding applications
Wide operating temperature range for versatile use
Chassis mount packaging for enhanced thermal management
RoHS3 compliance for environmental responsibility
