Manufacturer Part Number
IXTN40P50P
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
Drain to Source Voltage (Vdss): 500V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 230mΩ @ 500mA, 10V
Continuous Drain Current (Id): 40A @ 25°C (Tc)
Input Capacitance (Ciss): 11500pF @ 25V
Power Dissipation: 890W @ 25°C (Tc)
Operating Temperature: -55°C to 150°C (TJ)
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
Threshold Voltage (Vgs(th)): 4V @ 1mA
Drive Voltage Range: 10V
Gate Charge (Qg): 205nC @ 10V
SOT-227B Packaging
Quality and Safety Features
RoHS3 Compliant
Chassis Mount Packaging
Compatibility
Can be used in a variety of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switching circuits
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available from IXYS Corporation.
Key Reasons to Choose This Product
High voltage and current handling capabilities for efficient power conversion
Low on-resistance for low power loss
Wide operating temperature range for versatile applications
RoHS3 compliance for environmental sustainability
Chassis mount packaging for secure installation