Manufacturer Part Number
IXTN90N25L2
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
RoHS3 Compliant
SOT-227B Packaging
Operating Temperature Range: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 250V
Gate to Source Voltage (Vgs) (Max): ±20V
Drain-Source On-Resistance (Rds On) (Max): 33mΩ @ 500mA, 10V
MOSFET Technology
Continuous Drain Current (Id) @ 25°C: 90A (Tc)
Input Capacitance (Ciss) (Max): 23,000pF @ 25V
Power Dissipation (Max): 735W (Tc)
N-Channel FET Type
Gate Threshold Voltage (Vgs(th)) (Max): 4.5V @ 3mA
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max): 640nC @ 10V
Chassis Mount Mounting Type
Product Advantages
High voltage, high current capability
Low on-resistance
High power dissipation
Key Technical Parameters
Voltage, current, and power ratings
On-resistance and gate parameters
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature applications
Compatibility
Suitable for a wide range of power electronics and industrial applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Active product, no discontinuation plans identified
Potential replacements or upgrades available from the manufacturer
Key Reasons to Choose This Product
High power handling capability
Low on-resistance for improved efficiency
Suitability for high-temperature environments
Robust and reliable performance
Compatibility with various power electronics applications
