Manufacturer Part Number
IXTN60N50L2
Manufacturer
IXYS Corporation
Introduction
This is a high-performance N-Channel MOSFET transistor with a focus on power applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 500V
Vgs (Max) of ±30V
On-Resistance (Rds On) of 100mOhm @ 30A, 10V
Continuous Drain Current (Id) of 53A @ 25°C (Tc)
Input Capacitance (Ciss) of 24000pF @ 25V
Power Dissipation (Max) of 735W @ Tc
Gate Charge (Qg) of 610nC @ 10V
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Robust design for high power applications
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
MOSFET technology
N-Channel configuration
Vgs(th) (Max) of 4.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On) of 10V
Quality and Safety Features
RoHS3 compliant
SOT-227B package for chassis mount
Compatibility
Compatible with a wide range of power electronic circuit designs.
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial equipment
Product Lifecycle
This product is an active and widely available MOSFET solution. Replacements and upgrades may be available from the manufacturer or other suppliers.
Key Reasons to Choose This Product
High voltage and current handling capability for demanding power applications
Low on-resistance for efficient power conversion and minimal power losses
Robust design and wide operating temperature range for reliable operation
Compatibility with a wide range of power electronic circuit designs
