Manufacturer Part Number
IXTN62N50L
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
SOT-227B package
-55°C ~ 150°C operating temperature
500V drain to source voltage
±30V gate to source voltage
100mOhm maximum on-state resistance
62A continuous drain current at 25°C
11500pF maximum input capacitance
800W maximum power dissipation
N-Channel MOSFET
5V maximum gate threshold voltage
20V drive voltage
550nC maximum gate charge
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Wide operating temperature range
RoHS compliance for environmentally friendly applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 500V
Gate to Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 100mOhm
Continuous Drain Current (Id): 62A
Input Capacitance (Ciss): 11500pF
Power Dissipation (Ptot): 800W
Gate Threshold Voltage (Vgs(th)): 5V
Gate Charge (Qg): 550nC
Quality and Safety Features
RoHS3 Compliant
Compatibility
SOT-227-4, miniBLOC package
Compatible with various power conversion and control applications
Application Areas
Power conversion and control systems
Motor drives
Switching power supplies
Inverters
High-voltage and high-current applications
Product Lifecycle
Currently available
No known discontinuation plans
Replacement or upgrade options may be available from IXYS or other manufacturers
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding applications
Low on-state resistance for efficient power conversion
Wide operating temperature range for versatile use
RoHS compliance for environmentally friendly applications
Robust package and design for reliable performance
Compatibility with various power conversion and control systems
