Manufacturer Part Number
IXTP02N120P
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
1200V Drain to Source Voltage
200mA Continuous Drain Current @ 25°C
75Ω Drain-Source On-Resistance @ 100mA, 10V
104pF Input Capacitance @ 25V
33W Power Dissipation (Max) @ Tc
-55°C to 150°C Operating Temperature Range
Product Advantages
High Voltage and Current Handling Capabilities
Low On-Resistance for Efficient Power Switching
Wide Operating Temperature Range
Key Technical Parameters
Vdss: 1200V
Vgs (Max): ±20V
Rds On (Max): 75Ω @ 100mA, 10V
Ciss (Max): 104pF @ 25V
Pd (Max): 33W @ Tc
Quality and Safety Features
RoHS3 Compliant
TO-220-3 Packaging
Compatibility
Through-Hole Mounting
Application Areas
Power Switching
Industrial Controls
Automotive Electronics
Product Lifecycle
Current product
Availability of replacements and upgrades
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Wide operating temperature range
RoHS3 compliant
Available in industry-standard TO-220-3 package
