IXTN79N20 - IXYS

Manufacturer Part Number

IXTN79N20

Manufacturer

IXYS Corporation

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

N-Channel MOSFET

Drain to Source Voltage (Vdss): 200 V

Current Continuous Drain (Id) @ 25°C: 85A (Tc)

Power Dissipation (Max): 400W (Tc)

Vgs(th) (Max) @ Id: 4V @ 20mA

Product Advantages

RoHS3 Compliant

Suitable for chassis mount applications

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Mounting Type: Chassis Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

Package / Case: SOT-227-4, miniBLOC

Supplier Device Package: SOT-227B

Manufacturer's packaging: SOT-227B

Application Areas

Suitable for a variety of power electronics applications

Product Lifecycle

This product is still in active production and availability.

Key Reasons to Choose This Product

High power handling capability with 400W power dissipation rating

Robust N-Channel MOSFET design suitable for demanding applications

RoHS3 compliance for environmentally friendly usage

Chassis mount package for secure installation