Manufacturer Part Number
IXTP08N100D2
Manufacturer
IXYS Corporation
Introduction
High-voltage, depletion-mode N-channel MOSFET transistor
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage rating of 1000V
Low on-resistance of 21Ω at 400mA, 0V
High continuous drain current of 800mA at 25°C case temperature
Low input capacitance of 325pF at 25V
Depletion-mode operation
Product Advantages
Suitable for high-voltage, high-power applications
Robust performance over wide temperature range
Efficient power switching capabilities
Easy integration into diverse circuit designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1000V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 21Ω at 400mA, 0V
Continuous Drain Current (Id): 800mA at 25°C
Input Capacitance (Ciss): 325pF at 25V
Power Dissipation (Pd): 60W at 25°C case temperature
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for secure mounting and heat dissipation
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Industrial electronics
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Current product, no known plans for discontinuation
Replacements and upgrades may be available from IXYS or other manufacturers
Key Reasons to Choose This Product
Excellent high-voltage and high-power handling capabilities
Robust thermal performance over wide temperature range
Efficient switching characteristics for power-critical applications
Ease of integration into various circuit designs
Reliable quality and safety features
IXTP110N055VBsemi