Manufacturer Part Number
IXTP110N055T2
Manufacturer
IXYS Corporation
Introduction
High-performance power MOSFET transistor designed for high-power switching applications
Product Features and Performance
N-channel MOSFET with trench-based technology
High current capacity up to 110A
Low on-resistance of 6.6mΩ
Wide operating temperature range of -55°C to 175°C
High voltage rating of 55V
Fast switching with low gate charge of 57nC
Product Advantages
Excellent thermal management with high power dissipation of 180W
Ideal for high-power, high-efficiency applications
Robust and reliable design for demanding environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 55V
Maximum Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 110A
On-Resistance (Rds(on)): 6.6mΩ
Input Capacitance (Ciss): 3060pF
Gate Charge (Qg): 57nC
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Reliable and rugged construction
Compatibility
TO-220-3 package for easy integration into various circuit designs
Application Areas
High-power motor drives
Switching power supplies
Inverters and converters
Industrial automation and control systems
Product Lifecycle
Current production model with no known plans for discontinuation
Replacement and upgrade options available from the manufacturer
Key Reasons to Choose This Product
Exceptional performance and efficiency for high-power applications
Robust and reliable design for demanding environments
Proven technology and trusted IXYS brand
Wide operating temperature range and high power dissipation capabilities
Easy integration with TO-220-3 package