Manufacturer Part Number
IXTP130N10T
Manufacturer
IXYS Corporation
Introduction
High-performance power MOSFET with trench technology
Suitable for a wide range of power conversion and control applications
Product Features and Performance
130A continuous drain current at 25°C case temperature
100V drain-to-source voltage rating
Very low ON-state resistance of 9.1mΩ
Fast switching capability with low gate charge of 104nC
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent thermal performance and power handling capability
Reliable and durable trench MOSFET design
Optimized for high-efficiency power conversion circuits
Suitable for both low-side and high-side switching topologies
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Maximum Gate-to-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id) @ 25°C: 130A
On-State Resistance (Rds(on)): 9.1mΩ @ 25A, 10V
Input Capacitance (Ciss): 5080pF @ 25V
Power Dissipation (Tc): 360W
Quality and Safety Features
RoHS3 compliant
Trench MOSFET technology for high reliability and ruggedness
TO-220-3 package with optimized thermal performance
Compatibility
Suitable for a wide range of power conversion and control applications
Compatible with various power supply, motor control, and industrial automation systems
Application Areas
Switch-mode power supplies
Motor drives and industrial automation
Inverters and converters
High-frequency power conversion circuits
Product Lifecycle
This product is an active and widely-used power MOSFET from IXYS Corporation
Replacements and upgrades are readily available from the manufacturer and authorized distributors
Key Reasons to Choose This Product
Excellent power handling and thermal performance
Low on-state resistance for high efficiency
Fast switching capability for high-frequency applications
Rugged and reliable trench MOSFET design
Wide operating temperature range for versatile use
RoHS3 compliance for environmentally-friendly applications