Manufacturer Part Number
IXTN600N04T2
Manufacturer
IXYS Corporation
Introduction
High-power N-channel MOSFET transistor
Part of the TrenchT2 series
Product Features and Performance
Capable of handling up to 600A continuous drain current at 25°C
Low on-resistance of 1.05mΩ @ 100A, 10V
Wide operating temperature range of -55°C to 175°C
High input capacitance of 40,000pF @ 25V
Maximum power dissipation of 940W at 25°C
Product Advantages
Excellent thermal management and high-power handling capability
Low on-resistance for efficient power conversion
Suitable for high-current, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs(max)): ±20V
Gate Threshold Voltage (Vgs(th)): 3.5V @ 250A
Gate Charge (Qg): 590nC @ 10V
Quality and Safety Features
RoHS3 compliant
Housed in a robust SOT-227B package
Compatibility
Compatible with various high-power, high-current applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial and automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from IXYS Corporation.
Key Reasons to Choose This Product
Exceptional power handling and thermal management capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range suitable for demanding applications
Robust packaging and RoHS3 compliance for reliable performance
Compatibility with various high-power, high-current systems
