Manufacturer Part Number
IXTN21N100
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Current Continuous Drain (Id) @ 25°C: 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500A
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Product Advantages
High voltage and current capability
Low on-resistance
Suitable for high-power applications
Key Technical Parameters
RoHS: ROHS3 Compliant
Manufacturer's packaging: SOT-227B
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Series: MegaMOS
Package: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Chassis Mount
Quality and Safety Features
ROHS3 compliant
Compatibility
Compatible with high-power, high-voltage applications
Application Areas
Suitable for high-power, high-voltage applications such as power supplies, motor drives, and power conversion systems
Product Lifecycle
This product is currently available and not nearing discontinuation.
Key Reasons to Choose This Product
High voltage and current capability
Low on-resistance for high efficiency
Compact and robust packaging
Wide operating temperature range
Suitable for high-power, high-voltage applications
