Manufacturer Part Number
IXTN200N10L2
Manufacturer
IXYS Corporation
Introduction
High power N-channel MOSFET transistor with low on-resistance and high current capability.
Product Features and Performance
Capable of handling high continuous drain current of 178A at 25°C ambient temperature
Very low on-resistance of only 11mΩ at 100A and 10V gate-source voltage
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 540nC at 10V gate-source voltage
Robust design with high drain-source voltage rating of 100V
Product Advantages
Excellent thermal management due to high power dissipation capability of 830W
Reliable and durable performance under demanding operating conditions
Suitable for high-power applications that require high current and voltage handling
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 178A at 25°C
On-Resistance (Rds(on)): 11mΩ at 100A, 10V
Input Capacitance (Ciss): 23,000pF at 25V
Gate Charge (Qg): 540nC at 10V
Quality and Safety Features
RoHS3 compliant for environmental safety
Robust SOT-227B package for high reliability and thermal dissipation
Compatibility
Suitable for a wide range of high-power, high-current applications such as motor drives, power supplies, and industrial automation
Application Areas
High-power switching circuits
Motor drives
Power supplies
Industrial automation and control
Product Lifecycle
Currently in active production
No known plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent current and voltage handling capabilities
Very low on-resistance for high efficiency
Robust and reliable performance in harsh environments
Wide operating temperature range for versatile applications
Efficient thermal management through high power dissipation
